STD100N03L-1 STD100N03L N-CHANNEL 30V – 0.0045Ω – 80A – DPAK – IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1
■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters. Internal schematic diagram Applications
■ ■ HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER AUTOMOTIVE Order codes Sales Type STD100N03LT4 STD100N03L-1 Marking D100N03L D100N03L-1 Package DPAK IPAK Packaging TAPE & REEL TUBE September 2005 Rev 2 1/14 w w w. st .com 14 1 Electrical ratings STD100N03L - STD100N03L-1 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-Source Voltage (VGS = 0) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Value 30 ± 20 80 70 320 110 0.73 3.9 -55 to 175 Unit V V A A A W W/°C V/ns °C Symbol VDS VGS ID Note 1 ID IDM Note 2 PTOT dv/dt Note 3 Peak Diode Recovery Voltage Slope Tj Tstg Operating Junction Temperature Storage Temperature Table 2. Rthj-case Rthj-amb Tl Thermal Data Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose (for 10sec. 1.6 mm from case) 1.36 100 275 °C/W °C/W °C Table 3. Symbol IAV EAS Avalanche characteristics Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single pulsed avalanche Energy (starting Tj=25°C, ID=IAV, VDD = 24V Value 40 Unit A 500 mJ 2/14 STD100N03L - STD100N03L-1 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/Off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Static Drain-Source On Resistance Test Conditions ID = 250µA, V GS= 0 VDS = Max Rating, VDS = Max Rating, Tc=125°C VDS = ± 20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 40 A VGS= 5 V, ID= 20 A VGS= 10 V, ID= 40 A @125°C VGS= 5 V, ID= 20 A @125°C 1 0.0045 0.008 0.0068 0.0146 0.0055 0.01 Min. 30 10 100 ±200 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω IGSS VGS(th) RDS(on) RDS(on) Table 5. Symbol gfs Note 4 Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Forward Transcon
