NT128D64SH4B1G-75B NANYA

• 184 Dual In-Line Memory Module (DIMM)
• Unbuffered DDR DIMM based on 256M bit die B device, organized as either 32Mbx8 or 16Mbx16
• Performance:
• Intended for 133, 166 and 200 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = VDDQ = 2.5V ± 0.2V (2.6V ± 0.1V for PC3200)
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
- DIMM CAS Latency: 2, 2.5, 3
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect EEPROM
• Gold contacts
• SDRAMs are packaged in TSOP packages
• “Green” packaging – lead free