128K X 8 CMOS FLASH MEMORY
· Single 5-volt program and erase operations
· Fast page-write operations
- 128 bytes per page
- Page program cycle: 10 mS (max.)
- Effective byte-program cycle time: 39 mS
- Software-protected data write
· Fast chip-erase operation: 50 mS
· Read access time: 150 nS
· Page program/erase cycles: 1,000
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
· Automatic program timing with internal VPP generation
· End of program detection
- Toggle bit
- Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, 450 mil SOP and PLCC
