64K X 8 CMOS FLASH MEMORY
● Single 5-volt program and erase operations
● Fast page-write operations
- 128 bytes per page
- Page program cycle: 10 mS (max.)
- Effective byte-program cycle time: 39 mS
- Optional software-protected data write
● Fast chip-erase operation: 50 mS
● Read access time: 70/90/120 nS
● Typical page program/erase cycles: 1K/10K
● Ten-year data retention
● Software and hardware data protection
● Low power consumption
- Active current: 50 mA (max.)
- Standby current: 100 mA (max.)
● Automatic program timing with internal VPP generation
● End of program detection
- Toggle bit
- Data polling
● Latched address and data
● TTL compatible I/O
● JEDEC standard byte-wide pinouts
● Available packages: 32-pin PLCC, TSOP and VSOP
