Toshiba SiC MOSFET electric vehicle power conversion system reference design

) The power semiconductor has an inverter function that converts DC power into AC power, a converter function that converts AC power into DC power, and an inverter function that changes the frequency of AC power. It is an important device that helps various devices achieve energy saving.

Compared with traditional silicon (Si) MOSFET and IGBT products, power MOSFETs based on new silicon carbide (SiC) materials have high voltage resistance, high-speed switching, and low on-resistance properties. In addition to reducing product size, this type of product can greatly reduce power loss, thereby greatly improving the energy efficiency of the system. SiC MOSFETs are suitable for a variety of high-power and efficient applications, including industrial power supplies, solar inverters, and UPS. The total number of pulses in a single circle of the

Toshiba SiC MOSFET reference design contributes to your design

Electric Vehicle Power Conversion System Reference Design

3-phase AC 400V input PFC converter

As electric vehicles become more popular, the demand for efficient and compact power conversion systems continues to increase. The reference design of a 3-phase 400V AC input power factor correction (PFC) circuit based on Toshiba TW070J120B achieves 97% power conversion efficiency with a power factor of 0.99 or higher. This reference design provides a good starting point for the PFC (gate drive circuit, sensor circuit, output power switch) of high-power converters such as electric vehicle (EV) charging stations. It can be used as a basis for prototyping and developing applications to help realize the full potential.

Features:

has a bridgeless configuration with a 3-phase totem pole configuration that directly switches each phase.

achieves high power conversion efficiency by using SiC MOSFET for power switches.

The trade-off between efficiency and EMI can be optimized by adjusting the switching speed of the gate drive circuit.

Specifications:

Input voltage: 3-phase AC 312V to 528V

Output Voltage: DC 750V

Output power: 4.0kW

Electric Vehicle Charging Station and Solar Generator Inverter Reference Design

5kW isolated bidirectional DC-DC converter

The 5KW isolated bidirectional DC-DC converter reference design based on Toshiba TW070J120B adopts the dual active bridge (DAB) method, which is one of the most popular topologies for this type of high-power converter. There are full bridges on both sides of the DAB topology to control the power direction and magnitude by adjusting the phase difference between the left and right side bridge circuits. This highly versatile reference design is a starting point for developing and prototyping high-power conversion applications such as electric vehicle charging stations and solar generator inverters.

Features:

through DAB method.

uses SiC MOSFET on the high voltage side to achieve high power conversion efficiency.

Total solution including low-side MOSFET (TK49N65W5) and gate driver IC (TLP5214A)

Specifications:

High voltage side: DC 732V to 768V

Low voltage side: DC 396V to 404V

Rated power: 5.0kW

Toshiba TW070J120B—New 1200V silicon carbide MOSFET for high-efficiency power supplies—

TW070J120B adopts the second generation chip design (embedded SiC SBD) and has the characteristics of high withstand voltage, low input capacitance, low total gate charge, low on-resistance, low diode forward voltage, high gate voltage threshold voltage, etc. In industrial applications such as large-capacity AC-DC converters, photovoltaic inverters, and large-capacity bidirectional DC-DC converters, this new MOSFET will not only improve efficiency by reducing power loss, but will also contribute to reducing equipment size.

TW070J120B provides a high gate voltage threshold (Vth) of -10V to 25V to prevent failures; a gate-to-source voltage (VGSS) of -10V to 25V to support simpler gate drive designs.